Resistive Switching Characteristics and Controllable Quantized Conductance in Single-Crystal Anatase TiO2 on Si (001)

by Yu, E. T.; Hu, C.; McDaniel, M. D.; Posadas, A.; Demkov, A. A.; Ekerdt, J. G.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12, 64(8), pp 147-152

Resistive switching in single crystal anatase TiO2 grown by atomic layer deposition on Si (001) with an epitaxial single crystal SrTiO3 buffer layer is characterized and analyzed. Although switching occurs via a valence-change mechanism involving motion of oxygen vacancies, electrical characteristics highly reminiscent of electrochemical metallization memories – low leakage current in the high-resistance state, highly linear current-voltage characteristics in the low-resistance state, and a very high on/off current ratio – are observed. We postulate that these characteristics may be associated with formation of TinO2n-1 Magneli or Magneli-like nanophases in the low-resistance state. In addition, quantized conductance is observed in the low-resistance state, with the number of conducting ballistic channels being highly controllable via application of different compliance currents during the memory SET process. For compliance currents of 10-200 mu A, low resistance state conductances corresponding to 1 to 4 conductance channels, controllable to within a single quantum of conductance, are observed.

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